inchange semiconductor product specification silicon npn power transistors 2SD1212 description ? with to-220 package ? low collector saturation voltage ? large current capacity. ? complement to type 2sb903 applications ? suitable for relay drivers, high-speed inverters,converters, and other general large current switching applications. ? high-speed switching applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 60 v v ceo collector-emitter voltage open base 30 v v ebo emitter-base voltage open collector 6 v i c collector current 12 a i cm collector current-peak 20 a 1.75 p c collector power dissipation t c =25 ?? 35 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SD1212 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ max unit v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 60 v v (br)ceo collector-emitter breakdown voltage i c =1ma ;r be = ?t 30 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 6 v v cesat collector-emitter saturation voltage i c =5a, i b =0.25a 0.4 v i cbo collector cut-offcurrent v cb =40v;i e =0 0.1 ma i ebo emitter cut-offcurrent v eb =4v;i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =2v 70 280 h fe-2 dc current gain i c =6a ; v ce =2v 30 f t transition frequency i c =1a ; v ce =5v 120 mhz switching times t on turn-on time 0.20 | s t stg storage time 0.50 | s t f fall time i c =5a ;i b1 =0.5a i b2 =-0.5a; 0.03 | s ? h fe-1 classifications q r s 70-140 100-200 140-280
inchange semiconductor product specification 3 silicon npn power transistors 2SD1212 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm)
inchange semiconductor product specification 4 silicon npn power transistors 2SD1212
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